A Local Mobility Model for Ultra-Thin DGSOI nMOSFETs
نویسنده
چکیده
The derivation of a local mobility model for symmetrical ultra-thin DGSOI nMOSFETs is outlined. A local-field variant is found to reproduce the dependencies of the quantummechanical mobility on silicon slab thickness and normal field with a maximum error of 10%. The model can be used with the density-gradient approach.
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تاریخ انتشار 2004